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NTE388 (NPN) & NTE68 (PNP) Silicon Complementary Transistors General Purpose High Power Audio, Disk Head Positioner for Linear Applications
Description: The NTE388 (NPN) and NTE68 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications. Features: D High Safe Operating Area: 2A @ 80V D High DC Current Gain: hFE = 15 Min @ IC = 8A Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Collector-Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Peak (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.70C/W Note 1. Matched complementary pairs are available upon request (NTE68MCP). Matched complementary pairs have their gain specification (hFE) matched to within 10% of each other. Note 2. Pulse Test: Pulse Width = 5ms, Duty Cycle 10%.
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter OFF Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current VCEO(sus) IC = 100mA, IB = 0, Note 3 ICEX ICEO Emitter Cutoff Current Second Breakdown Second Breakdown Collector Current with Base Forward Bias ON Characteristics DC Current Gain hFE VCE(sat) VBE(on) fT Cob VCE = 4V, IC = 8A VCE = 4V, IC = 16A Collector-Emitter Saturation Voltage IC = 8A, IB = 800mA IC = 16A, IB = 3.2A Base-Emitter On Voltage Dynamic Characteristics Current Gain-Bandwidth Product Output Capacitance VCE = 10V, IC = 1A, ftest = 1MHz VCB = 10V, IE = 0, ftest = 1MHz 4 - - - - 500 MHz pF VCE = 4V, IC = 8A 15 5 - - - - - - - 60 - 1.4 4.0 2.2 V V V IS/b VCE = 50V, t = 0.5s (non-repetitive) VCE = 80V, t = 0.5s (non-repetitive) 5 2 - - - - A A IEBO VCE = 250V, VBE(off) = 1.5V VCE = 200V, IB = 0 VEB = 5V, IC = 0 250 - - - - - - - - 250 500 500 V A A A Symbol Test Conditions Min Typ Max Unit
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Note 3. Pulse Test: Pulse Width = 300s, Duty Cycle 2%.
.135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane
.312 (7.93) Min Emitter .215 (5.45)
.040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes)
.430 (10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max Collector/Case

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